首页 | 本学科首页   官方微博 | 高级检索  
     

Ar气保护固相合成花状二硫化钼工艺研究
引用本文:崔玉青,唐军利,张晓. Ar气保护固相合成花状二硫化钼工艺研究[J]. 人工晶体学报, 2022, 51(8): 1445-1450
作者姓名:崔玉青  唐军利  张晓
作者单位:金堆城钼业股份有限公司技术中心,西安 710077
基金项目:陕西省重点研发计划(2021LLRH-05-05,2021LLRH-05-06)
摘    要:以三氧化钼和硫为原料,采用Ar气保护固相合成法,合成花状二硫化钼。采用XRD、SEM、TEM等手段对样品的结构和形貌进行表征。考察了原料比、反应温度、反应时间、升温速率对样品纯度的影响,制备出纯度较高的二硫化钼。结果表明:当MoO3与S物质的量之比为1∶7.5,反应温度为450 ℃,反应时间为4 h,升温速率为15 ℃/min,可得到纯度为99.4%的花状二硫化钼,该花状结构由厚度为10 nm左右的翘曲片层组成,TEM照片中可见0.62 nm单层二硫化钼结构,具有较大的比表面积,使其在储能、催化等领域有广阔的应用前景。

关 键 词:二硫化钼  花状结构  固相合成法  纯度  比表面积  二维材料  
收稿时间:2022-04-24

Solid-State Synthesis of Flower-Like Molybdenum Disulfide by Argon Protection
CUI Yuqing,TANG Junli,ZHANG Xiao. Solid-State Synthesis of Flower-Like Molybdenum Disulfide by Argon Protection[J]. Journal of Synthetic Crystals, 2022, 51(8): 1445-1450
Authors:CUI Yuqing  TANG Junli  ZHANG Xiao
Affiliation:Technical Center, Jinduicheng Molybdenum Co., Ltd., Xi'an 710077, China
Abstract:Flower-like molybdenum disulfide was synthesized from molybdenum trioxide and sulfur by argon protection solid-state method. The structure and morphology of the products were characterized by XRD, SEM and TEM. The effects of raw material ratio, reaction temperature, reaction time and heating rate on the purity of the product were investigated, and molybdenum disulfide with high purity was prepared. The results show that when the molar ratio of MoO3∶S is 1∶7.5, the reaction temperature is 450 ℃ and the reaction time is 4 h, heating rate is 15 ℃/min, the flower-like molybdenum disulfide with purity of 99.4% can be obtained. The flower-like structure is composed of warped thin plate with thickness of about 10 nm. 0.62 nm monolayer MoS2 is observed by TEM. Flower-like molybdenum disulfide has large specific surface area, which has broad application prospects in the fields of energy storage and catalysis.
Keywords:molybdenum disulfide  flower-like structure  solid-state method  purity  specific surface area  two dimension material  
点击此处可从《人工晶体学报》浏览原始摘要信息
点击此处可从《人工晶体学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号