基于Micro-LED全彩色微显示器制造技术研究进展

Micro-LED作为新一代显示技术,具有高亮度、低能耗、长寿命、自发光等优点,但其低效率全彩色显示等技术瓶颈限制了其产业化的进程和普及率的上升。全彩色显示是micro-LED商业化的关键技术,但随着LED芯片的高度集成化和微小化,将巨量的RGB三色芯片转移到同一衬底上实现全彩色显示的方法很大程度上造成了高成本和低成品率。因此,亟需发现更为简便和高效的全彩色显示方法。本文就micro-LED微显示器的制作技术及其实现全彩色显示的方法进行综述,重点介绍了量子点颜色转换层法、RGB直接排列法、特殊结构法和光学透镜法,最后探讨了micro-LED微显示器的技术挑战及发展趋势。

Research Progress of Full-Color Micro-Display Device Manufacturing Technology Based on Micro-LED

As a new generation of display technology, micro-LED demonstrates the advantages of high brightness, low energy consumption, long life, and self-luminous. However, the technical bottlenecks, such as difficulties in achieving high-efficiency full-color displays, have hindered their industrialization processes and popularity. The full-color display is a crucial technology for the commercialization of micro-LED. However, with the high degree of integration and miniaturization of LED chips, the mass transfer of RGB chips to the same substrate for achieving full-color display has resulted in high costs and low yields. Therefore, there is an urgent need to discover a simpler and more efficient method for full-color display. This paper provides an overview of micro-LED micro-display device fabrication technologies and several methods for achieving full-color displays, focusing on the quantum dots color conversion layer method, the RGB direct alignment method, the special structure method, and the optical lens method. The technical challenges and development trends of micro-LED micro-displays are also discussed.