Ⅲ-Ⅵ族InSe半导体晶体生长研究进展

Ⅲ-Ⅶ族InSe晶体是一种非常重要的化合物半导体材料，在高性能纳米电子器件、红外光探测、光电器件及柔性电子等领域有广泛应用。本文简要介绍了In-Se相图的发展历程，InSe具有非一致熔融特性，可通过包晶反应从准化学计量比或非化学计量比溶液中析晶获得，其中In/Se摩尔比对InSe转化率有重要影响。迄今，垂直布里奇曼法、提拉法、水平梯度凝固法、低温液相法及气相输运法等多种技术被成功用于制备InSe晶体。为全面了解InSe晶体生长的历史和现状，本文从工艺原理、技术要点、晶体生长结果等方面将国内外相关工作进行了梳理，并对各种方法的优缺点进行了比较。研究分析表明垂直布里奇曼法因对设备要求简单，操作简易，现已成为制备高质量大尺寸InSe晶体的主流技术；水平梯度凝固法则在ε型InSe晶体生长方面颇具特色，未来可在新材料性能研究与应用探索上与垂直布里奇曼法形成一定补充。

Research Progress of Ⅲ-Ⅵ Group InSe Semiconductor Crystal Growth

Ⅲ-Ⅵ group InSe crystal is a very important compound semiconductor material, which is widely used in the fields of high-performance nano electronic devices, infrared light detection, photoelectric devices and flexible electronics. The development of In-Se phase diagram is briefly reviewed. InSe has incongruent melting characteristics that can be obtained by peritectic reaction from the quasi stoichiometric or non-stoichiometric solution, and the mole ratio of In/Se has an important influence on the productivity of InSe. In order to prepare InSe crystal, several techniques have been adopted in the past, such as vertical Bridgman method, Czochralski method, horizonal gradient freeze method, low temperature liquid phase method and vapor transfer method. In order to better understand the development of InSe crystal growth, this review summarizes the process principle, technical points, production of these techniques, and discsuses their advantages and disadvantages. It is shown that the vertical Bridgman method has become a mainstream method for preparing high quality and large size InSe crystals by virtue of the simple apparatus and feasible operation. The horizonal gradient freeze method is a special way for growing ε-InSe crystal, which would play a role of supplement to the vertical Bridgman method in the research and application of new material in the future.