High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition |
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| Authors: | Ezubchenko I. S. Chernykh M. Ya. Mayboroda I. O. Trun’kin I. N. Chernykh I. A. Zanaveskin M. L. |
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| Affiliation: | 1.National Research Center “Kurchatov Institute”, 123182, Moscow, Russia
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| Abstract: | Crystallography Reports - The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has been... |
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