Proximity X-ray and extreme ultraviolet lithography |
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| Affiliation: | 1. Department of Otorhinolaryngology, Head and Neck Surgery, Friedrich-Alexander-Universität Erlangen–Nürnberg, University Hospital, Erlangen, Germany;2. Department of Maxillofacial Surgery, Friedrich-Alexander-Universität Erlangen–Nürnberg, University Hospital, Erlangen, Germany;3. Institute of Pathology, Friedrich-Alexander-Universität Erlangen–Nürnberg, University Hospital, Erlangen, Germany;4. Department of Otorhinolaryngology, Head and Neck Surgery, RWTH University of Aachen, Germany;1. Department of Oral and Maxillofacial Surgery/Plastic Surgery, University Medicine Greifswald, Greifswald, Germany;2. Department of Obstetrics and Gynecology, University Medicine Greifswald, Greifswald, Germany;3. Department of Dermatology, University Medicine Greifswald, Greifswald, Germany;4. Leibniz-Institute for Plasma Science and Technology (INP), Greifswald, Germany;5. National Center for Plasma Medicine e.V., Berlin, Germany;1. Accurion GmbH, Stresemannstraße 30, 37079 Göttingen, Germany;2. Walter Schottky Institute and Physics-Department, TU München, Garching 85748, Germany;3. Nanosystems Initiative Munich, 80799, Germany;4. Center for Solid State Physics and New Materials, Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia;5. College of Nanoscale Science and Engineering, State University of New York, 253 Fuller Road, Albany, NY 12203, United States;1. University of Oklahoma, Department of Chemistry and Biochemistry, Norman, OK 73019, USA;2. Department of Chemistry, Lanzhou University, Lanzhou, Gansu 730000, China |
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| Abstract: | Present status and technical issues of proximity X-ray lithography (PXRL), especially synchrotron radiation (SR) lithography, and extreme ultraviolet lithography (EUVL) for use in the next generation lithography will be presented. To make SR lithography a practical method, many improvements in a wide range of lithographic components have been made over the past several years. These developments have been successfully applied to the fabrication testing of LSIs. For widespread industrial use, the feasibility and cost-effectiveness in mass production should be guaranteed. On the other hand, since there is a strongly demand for EUVL as a main candidate for the nodes of 70 and 50 nm, global consortiums have been making intense efforts to develop key components of EUVL, such as multilayer mirror and masks, resist processes, and sources. To make EUVL a major tool, timing in development and cost of ownership should be critical issues. |
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