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Characterization of the crystallization behaviors in the PbTiO3 thin films on Si substrates by an infrared spectroscopy technique
Institution:1. LPMMAT, Faculty of Sciences Ain-Chock, University of Hassan II, Casablanca, Morocco;2. RELDS, Faculty of Sciences Ain-Chock, Hassan II University of Casablanca, Morocco;3. LASMAR - URAC11, Faculty of Sciences, University of Moulay Ismail, Meknes, Morocco;1. Department of Materials, University of Oxford, Parks Road, OX1 3PH Oxford, UK;2. School of Nuclear Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China;3. Institute of Nuclear Safety Systems, Inc. (INSS), 64 Sata, Mihama-cho, Mikata-gun, Fuki, Mihama 919-1205, Japan;1. University of Limoges, Heterogeneous Material Research Group, Civil Engineering Department (GEMH-GCD), EA 3178, Boulevard Jacques Derche, 19300, Egletons, France;2. University Constantine 3, School of Architecture and Urbanism, Laboratory for Sustainable Architecture and Environment (ABE), Constantine, 25000, Algeria;3. Technical Center of Natural Building Materials (CTMNC), Research and Development Department of Ceramic, Ester Technopole, 87069, Limoges Cedex, France;4. National High School of Industrial Ceramic, Science of Ceramic Processing and Surface Treatments (SPCT), UMR 7315, 12, Rue Atlantis, 87068, Limoges Cedex, France
Abstract:PbTiO3 thin films on silicon substrates derived from a modified sol–gel technique are characterized by IR reflectance spectroscopy for the first time. Seven infrared (IR) reflectance peaks modes have been observed in the crystallized perovskite PbTiO3 thin films and are assigned to the corresponding phonon modes. Comparisons between the IR reflectance spectra of PbTiO3 thin films obtained by different annealing processes, i.e., rapid thermal annealing (RTA) and conventional thermal annealing (CTA), have also been carried out. It is observed that the frequencies of most peaks in the RTA-derived PbTiO3 films are lower than that in the CTA-derived films.
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