ZnSe-based heterostructures for blue-green lasers |
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| Institution: | 1. College of Environmental Science and Engineering, North China Electric Power University, Beijing, 102206, PR China;2. School of Nuclear Science and Engineering, North China Electric Power University, Beijing, 102206, PR China;3. Department of Chemistry, Qinghai Normal University, 810008, Xining, Qinghai, PR China;4. NAAM Research Group, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia;5. Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, School for Radiological and Interdisciplinary Sciences, Soochow University, Suzhou, 215123, PR China;1. School of Biological and Medical Engineering, Hefei University of Technology, Hefei 230009, Anhui, China;2. School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009, Anhui, China;3. Instrumental Analysis Center, Hefei University of Technology, Hefei 230009, Anhui, China;1. Department of Chemistry, Pohang University of Science and Technology, Pohang 37673, South Korea;2. Electronic Convergence Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52852, South Korea;3. Business Support Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52852, South Korea;4. Daegu Technopark Nano Convergence Practical Application Center, Daegu 42716, South Korea;5. Department of Chemistry, Wonkwang University, Iksan 54538, South Korea |
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| Abstract: | We review the current status of research activity on ZnSe-based heterostructures for bluegreen laser diodes (LDs), focusing on a few selected critical issues. Early investigations on defect microstructures allowed to strongly enhance the lifetime of LDs. However, the LD lifetime seems to saturate now, and we point out that the model proposed for explaining the degradation of LD does not predict such a saturation. Next, we detail the mechanisms responsible for carrier compensation in p-type ZnSe and we survey the properties of ZnMgSSe and ZnMgBeSe wide bandgap quaternary alloys which are used as cladding layers in LDs. We emphasize that the low p-type dopability of ZnSe and related materials has a dramatic impact on the performance of LDs in terms of emitted wavelength as well as device lifetime. |
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