Strain effects in GaN epilayers |
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| Affiliation: | 1. Centre national de la recherche scientifique, groupe d’étude des semi-conducteurs, Université de Montpellier II, case courrier 074, 34095 Montpellier cedex 5, France;2. Virginia Commonwealth University, College of Engineering and Department of Physics, P.O. Box 843072, Richmond, VA , USA 23284-3072;1. Department of Cartography, Trier University, D-54286 Trier, Germany;2. Restoration Ecology, Department of Ecology and Ecosystem Management, School of Life Sciences Weihenstephan, Technische Universität München, D-85354 Freising, Germany;3. Institute of Biology, Freie Universität Berlin, D-14195 Berlin, Germany;4. Terrestrial Ecology Research Group, Department of Ecology and Ecosystem Management, School of Life Sciences Weihenstephan, Technische Universität München, D-85354 Freising, Germany;5. Department of Ornithology, National Museums of Kenya, Nairobi, Kenya;1. University of Winnipeg, Department of Criminal Justice, Centennial Hall, 3rd Floor, 515 Portage Avenue, Winnipeg, Manitoba, R3B 2E9, Canada;2. University of Ottawa, Department of Criminology, Canada;3. McGill University, Faculty of Law, Canada;1. Department of Materials Science and Engineering, University of Sheffield, UK;2. National Centre for Advanced Tribology at Southampton, University of Southampton, UK;1. University of Jyvaskyla, Department of Physics, P.O. Box 35, FI-40014 University of Jyvaskyla, Finland;2. Helsinki Institute of Physics, P.O. Box 64, FI-00014 University of Helsinki, Finland;3. Instituto Galego de Física de Altas Enerxías (IGFAE), Universidade de Santiago de Compostela, E-15782 Galicia, Spain |
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| Abstract: | A review is given about the influence of strain fields on the optical properties of GaN epilayers. We find the basic constant of the material: crystal field splitting, spin-orbit interaction parameter, deformation potentials. We discuss the evolution of the exciton binding energy with strain. |
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