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Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows |
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| Authors: | J. P. Liu B. S. Zhang M. Wu D. B. Li J. C. Zhang R. Q. Jin J. J. Zhu J. Chen J. F. Wang Y. T. Wang H. Yang |
| Affiliation: | a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China b Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China |
| Abstract: | AlInGaN quaternary epilayers have been grown with various TMGa flows by metalorganic chemical vapor deposition to investigate the influence of growth rate on the structural and optical properties. Triple-axis X-ray diffraction measurements show AlInGaN epilayers have good crystalline quality. Photoluminescence (PL) measurements show that the emission intensity of AlInGaN epilayers is twenty times stronger than that of AlGaN epilayer with comparable Al content. V-shaped pits are observed at the surface of AlInGaN epilayers by atomic force microscopy (AFM) and transmission electron microscopy (TEM). High growth rate leads to increased density and size of V-shaped pits, but crystalline quality is not degraded. |
| Keywords: | A1. Triple-axis X-ray diffraction A1. Atomic force microscopy A3. Metalorganic chemical vapor deposition B1. AlInGaN Quaternary alloys |
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