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Observation of defects and growth orientations of YBa2Cu3Ox thin films with YSZ buffer layers on Si |
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| Authors: | Doo-Sup Hwang Soon-Gul Lee Yong-Ki Park John-S Chun and Jong-Chul Park |
| Institution: | a Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong Dong, Yusong Gu, Taejon 305-606, South Korea b Department of Physics, Korea University, 208 Seochang Dong, Jochiwon, Chungnam 339-800, South Korea c Korea Research Institute of Standards and Science, P.O. Box 102, Yusong, Taejon 305-600, South Korea |
| Abstract: | We have investigated defects and in-plate orientations of YBa2Cu3Ox thin films prepared by pulsed laser deposition (PLD) with YSZ as a buffer layer. The films showed c-axis oriented growth with the transition temperature Tco up to 87 K. Several types of defects including thermally induced cracks, grain boundaries and outgrowths were observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The grain boundary provided a favorable path for crack propagation. The outgrowths nucleated on the YSZ surface grew with stoichiometric composition. According to X-ray diffraction (XRD) and HRTEM studies the YSZ buffer layer grew with the orientation relationship, YSZ 110 //Si110 and YSZ(001)//Si(001) up to the YBCO/YSZ interface. The superconducting YBCO films on top grew mainly with YBCO100//Si110 and YBCO(001)//Si(001), with some minor portions of YBCO110//Si110 and YBCO(001)//Si(001). |
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