Electron and hole traps in N-GaAs crystals

Deep traps were measured and their electronic and optical properties were determined by junction capacitance techniques in n-GaAs crystals grown by different methods. Four electron-traps and four hole-traps were detected. An electron trap was not observed in LPE wafers. A hole trap at 0.45 eV above the top of the valence band was detected in all wafers measured here.