Electret states and the phase transition in a surface layer of the TlGaSe2 ferroelectric semiconductor |
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Authors: | Mir-Hasan Yu. Seyidov R. A. Suleymanov R. Khamoev |
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Affiliation: | (1) Department of Physics, Gebze Institute of Technology, Kocaeli, 41400, Turkey;(2) Institute of Physics, National Academy of Sciences of Azerbaijan, pr. Dzhavida 33, Baku, AZ-1143, Azerbaijan |
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Abstract: | The electret polarization is investigated in the TlGaSe2 ferroelectric semiconductor. It is proved for the first time that stable internal electric fields associated with residual electret polarization are induced in crystals of the TlGaSe2 ferroelectric semiconductor at temperatures T < 200 K. It is experimentally established that the peak of the pyroelectric current measured in the vicinity of the phase transition to the ferroelectric polar phase depends substantially on the temperature at which the external electric field is switched off when the TlGaSe2 ferroelectric crystal under investigation is preliminarily cooled from room temperature. The results obtained are discussed in the framework of a model according to which internal electret fields are induced by charges localized at different levels in the bulk and on the surface of the TlGaSe2 ferroelectric crystal. These fields drastically change at temperatures in a narrow range near 135 K. The inference is made that a phase transition occurs in the surface layer of the TlGaSe2 crystal at a temperature close to ~135 K. |
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