| Abstract: | We report the results of a study of voltage-current characteristics of gallium arsenide metal-semiconductor Schottky barrier structures, in which palladium and W-Ni alloy were electrochemically deposited in SiO2 windows to form the barrier. It is demonstrated that the voltage-current characteristics are significantly distorted at low temperatures. The observed behavior of the voltage-current characteristics at low temperatures —the appearance of excess current and the increase in the ideality factor with carrier concentration in the excess current regime —is explained by a model in which peripheral mechanical stresses in the contacts lower the potential barrier height on the periphery of the contacts.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No, 10, pp. 87–93, October, 1986. |
