三(五氟苯基)硼烷掺杂有机/高分子半导体的研究进展

有机/高分子共轭聚合物的结构设计是制备高性能有机半导体的有效策略,但该过程存在着设计合成周期长、制备步骤复杂和产率偏低等问题。为了克服这些问题,近年来人们越来越关注对有机/高分子半导体的掺杂。然而,传统电荷转移掺杂剂(如卤族单质I₂、金属氧化物Fe₃O₄、小分子F4TCNQ等)存在掺杂效率低,溶解度差和掺杂条件苛刻等问题。相比之下,三(五氟苯基)硼烷具有溶解度高、掺杂效率高、广泛适应性等优点。本文结合相关文献综述了三(五氟苯基)硼烷掺杂有机半导体的物理机制,并探讨了掺杂有机半导体的性质。此外,本文还总结了三(五氟苯基)硼烷掺杂在不同光电功能器件中的应用并明确了今后的研究方向。

Research Progress of Tri (Pentafluorophenyl) Borane Doped Organic/Polymer Semiconductors

The structural design of organic/conjugated polymers is an effective strategy for the preparation of high-performance organic semiconductors. However, this process is associated with problems such as long design and synthesis cycles, complex preparation steps, and low yields. To overcome these issues, doping of organic/conjugated semiconductors has garnered increasing attention in recent years. However, traditional charge transfer dopants (such as elemental iodine, iron oxide Fe₃O₄, and small molecule F4TCNQ) suffer from low doping efficiency, poor solubility, and stringent doping conditions. In contrast, tri(pentafluorophenyl)borane offers advantages such as high solubility, high doping efficiency, and wide adaptability. This article combines relevant literature to review the physical mechanism of tri(pentafluorophenyl)borane doping in organic semiconductors and discusses the properties of doped organic semiconductors. Additionally, this article summarizes the applications of tri(pentafluorophenyl)borane doping in various optoelectronic functional devices. Finally, this article points out future research directions, hoping to contribute to the study of doped organic semiconductor devices.