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Effect of nitrogen surface doping on the work function and field emission of hydrogenated amorphous carbon films |
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| Authors: | J Xu J Mei XH Huang X Li Z Li W Li K Chen |
| Institution: | (1) National Laboratory of Solid State Microstructures and Department of Physics and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, Nanjing University, Nanjing, 210093, China;(2) National Laboratory of Infrared Physics, Shanghai Institute for Technical Physics CAS, Shanghai, China |
| Abstract: | The effect of nitrogen surface doping on the electron field emission characteristics of hydrogenated amorphous carbon films was studied. It was found that the emission threshold electric field decreased after nitrogen surface doping which indicated the reduction of the emission barrier at the film surface. It was demonstrated that this improvement arose from the decrease of the effective work function due to the formation of a dipole layer induced by chemical termination and chemical structural change on the film surface. PACS 52.75.Xx; 73.30 +y; 73.61.Jc |
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