Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurement |
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Authors: | S Tarucha H Okamoto Y Iwasa N Miura |
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Institution: | Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Japan;Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan |
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Abstract: | Magneto-optical absorption spectra due to exciton states and Landau-levels were measured in GaAs/AlAs multi-quantum-wells. By extrapolating the photon energies of the absorption peaks to zero magnetic field, the lowest state (1S) heavy hole exciton binding energy, EB(1S), was obtained as a function of well size Lz in the range . The Lz dependence of EBh showed the change of the exciton character from three-dimensional to two-dimensional with decreasing Lz. The diamagnetic shift observed for the heavy hole exciton peak was larger than that for the light hole exciton peak, showing the anisotropic nature of the Luttinger-Kohn Hamiltonian. The diamagnetic shift of the heavy hole exciton peak became smaller as Lz was decreased, suggesting the enhancement of the two-dimensional exciton character. |
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