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On the initial phase of native oxide formation on Si〈1 1 1〉
Authors:Constantino Fiori  R.A.B. Devine
Affiliation:1. Centre National d''Etudes des Télécommunications, BP 98, 38243 Meylan, France
Abstract:An Auger Electron Spectroscopy study of the initial phase of native oxide formation on Si〈1 1 1〉 is reported. Observed Auger peaks for low levels of oxygen exposure are explained in terms of a model of monoatomic and peroxyl surface bonding and the position of associated bands deduced with respect to the SiO2 valence band edge. For high levels of oxygen exposure, only monatomic bonding is found whilst the full SiO2 valence band structure appears.
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