Compensation-induced optical transitions within the ground state of shallow donors in Ge and Si |
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| Authors: | J. Trylski J. Glazer |
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| Affiliation: | Institute of Theoretical Physics, Warsaw University, Warsaw, Poland;International School for Advanced Studies, Trieste, Italy |
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| Abstract: | An approximate formula for integral intensity of the compensation-induced parity-forbidden optical transition within the ground state of shallow donors in Ge and Si is derived in the limit of small compensations. The lineshapes for absorptions in Ge(Sb), Ge(P), Ge(As) and Si(As) are also calculated. |
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