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Electrical transport measurements in TiS3
Authors:E Finkman  B Fisher
Institution:1. Department of Electrical Engineering Technion - Israel Institute of Technology Haifa 32000, Israel;2. Department of Physics Technion - Israel Institute of Technology Haifa 32000, Israel
Abstract:Results of measurements of conductivity and Hall coefficient in the temperature range 15–300K and of thermal emf in the temperature range 80–400K, carried out on TiS3 samples, are reported. The results indicate that these crystals are semiconducting with extrinsic n-type conductivity. The mobility of the carriers is about 30 cm2/V sec at room temperature, increases up to about 100 cm2/V sec at 100K and drops at lower temperatures. The Seebeck coefficient is in qualitative agreement with these findings but its detailed temperature dependence is not yet understood.
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