Control of the metal-semiconductor phase transition in a vanadium dioxide film with the aid of a fast-acting thermoelectric cooler. III

The pulsed-cooling dynamics of fast-acting thermoelectric coolers is analyzed. Good agreement is obtained between the theory and the experimental results on information erasure with an interference vanadium dioxide structure in the single-pulse and repetitive-pulse modes. It is shown that the actually achievable overwrite frequency with thermoelectric erasure of information is about 30 Hz, and a fast-acting thermoelectric cooler is capable of providing a temperature difference of at least 10 °C between the cold and hot junctions under such conditions. Zh. Tekh. Fiz. 68, 110–115 (February 1998)