Structural characterization of amorphous silicon nitride by molecular dynamics simulation

Computer simulation, using the molecular dynamics (MD) technique, has been carried out on amorphous silicon nitride (a-Si₃N₄) with simple Busing-type potentials. From the MD simulation, the following points have been deduced. (1) The average Si---N bond length obtained from MD results is r_Si---N=1.74 Å, and its coordination number, N_Si---N, is 3.95. The bond angles around a Si and a N atom, N---Si---N and Si---N---Si, are found to be 109.8° ± 12.36° and 127.08° ± 16.63°, respectively. The N---Si---N value obtained is in very good agreement with the tetrahedral bond angle (= 109.47°). Hence, the short-range structural arrangement of a-Si₃N₄ comprises tetrahedral SiN₄ units. The MD results presented in this study also indicate that there exist only a small number of defects such as dangling bonds. (2) These MD results are in good agreement with the reported X-ray and neutron data. The a-Si₃N₄ structure can be reproduced by the MD simulation given in this study.