Dynamics of film growth of GaAs by MBE from Rheed observations |
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Authors: | J H Neave B A Joyce P J Dobson N Norton |
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Institution: | (1) Philips Research Laboratories, Redhill, Surrey, UK;(2) Department of Physics, Imperial College of Science and Technology, Prince Consort Road, London, UK |
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Abstract: | Detailed observations have been made of the intensity oscillations in the specularly reflected and various diffracted beams in the RHEED pattern during MBE growth of GaAs, Ga
x
Al1–x
As and Ge. The results indicate that growth occurs predominantly in a two-dimensional layer-by-layer mode, but there is some roughening, which is enhanced by deviations from stoichiometry and the presence of impurities. In the case of the GaAs (001) –2×4 reconstructed surface a combination of dynamic and static RHEED measurements has provided firm evidence for the presence of one-dimensional disorder features as well as surface steps. |
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Keywords: | 68 55 |
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