| 用迁移率和载流子浓度研究碲镉汞中的深能级 |
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| 引用本文： | 李向阳,方家熊.用迁移率和载流子浓度研究碲镉汞中的深能级[J].红外技术,1997,19(2):5-8. |
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| 作者姓名： | 李向阳 方家熊 |
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| 作者单位： | [1]山东大学红外遥感研究室 [2]中科院上海技术物理研究所 |
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| 摘 要： | 获得了一种研究碲镉汞深能级的方法。通过分析迁移率 载子浓度与温度的关系，可以得到关于深能级的重要依据。
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| 关 键 词： | HgCdTe 深能级 载流子浓度 迁移度 红外光学材料 |
The Relationship between Deep Levels in Hg 1- x Cd x Te Crystal and Its Carrier Mobility and Concentration |
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| Li Xiangyang,Hu Xierong,Zhao Jianhua.The Relationship between Deep Levels in Hg 1- x Cd x Te Crystal and Its Carrier Mobility and Concentration[J].Infrared Technology,1997,19(2):5-8. |
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| Authors: | Li Xiangyang Hu Xierong Zhao Jianhua |
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| Abstract: | Experiments were made on analyzing the relationship between deep levels in HgCdTe crystal and the carrier mobility and concentration Some information about deep levels was obtained |
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| Keywords: | Hg 1- x Cd x Te Deep level Carrier concentration Mobility |
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