| 中高压电子铝箔腐蚀系数的研究 |
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| 引用本文： | 班朝磊,何业东.中高压电子铝箔腐蚀系数的研究[J].电子元件与材料,2007,26(8):28-30. |
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| 作者姓名： | 班朝磊 何业东 |
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| 作者单位： | 北京科技大学,北京市腐蚀、磨蚀与表面技术重点实验室,北京,100083 |
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| 摘 要： | 分析比较了基于矩形凹槽模型、圆孔隧道模型、正立方孔隧道模型计算出的中、高压电子铝箔腐蚀系数与KDK公司(H100)形成箔实际腐蚀系数的关系。结果表明:中、高压电子铝箔真实理论极限腐蚀系数应介于正立方孔-圆孔理论极限腐蚀系数之间。中压电子铝箔(220～485 V)通过电蚀扩面提高化成箔比电容余地还很大,高压电子铝箔(>485 V)的实际腐蚀系数与理论极限腐蚀系数已经很接近,通过电蚀扩面提高比电容的余地较小。
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| 关 键 词： | 电子技术 腐蚀系数 电蚀 电子铝箔 铝电解电容器 比电容 |
| 文章编号： | 1001-2028（2007）08-0028-03 |
| 修稿时间： | 2007-02-07 |
Investigation on etching coefficient of middle and high voltage electronic Al-foils |
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| BAN Chao-lei,HE Ye-dong.Investigation on etching coefficient of middle and high voltage electronic Al-foils[J].Electronic Components & Materials,2007,26(8):28-30. |
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| Authors: | BAN Chao-lei HE Ye-dong |
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| Institution: | Beijing Key Lab. for Corrosion, Erosion and Surface Technology, Beijing University of Science and Technology Beijing 100083, China |
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| Abstract: | The etching coefficients based on rectangular groove,cylinder tunnel and cube tunnel etching models and actual etching coefficient of KDK(H100) were analyzed and compared.The results show that the true theoretical limit etching coefficient of middle or high voltage aluminium foils should exist between the theoretical limit etching coefficients for cylinder etching model and cube etching model as there is plenty of room for improvement in special capacitance of middle voltage aluminium foils(220～485 V),but little for high voltage aluminium foils(>485 V) because the latter’s actual etching coefficient has approached the theoretical limit etching coefficient. |
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| Keywords: | electron technology etching coefficient electroetching electronic aluminium foil aluminium electrolytic capacitor special capacitance |
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