Excitations in doped quantum dot insisted by discontinuous reversals of static electric field: Interplay between pulse and dopant site

We explore the excitation profile of a repulsive impurity doped quantum dot. The quantum dot is subject to a discontinuously reversing static electric field. The dopant impurity potential chosen assumes Gaussian form. The investigation reveals the key role played by the dopant location and the number of pulses offered by the external field to the dot in controlling the excitation rate. Time-dependent Hellman-Feynman theorem has been invoked to understand the extent of energy transfer between field direction and the direction where no field is applied. The combined transition rate from ground to other excited states is also determined to support the findings.