| 用正电子湮没技术研究a-Si:H/a-SiNx:H多层膜中的界面缺陷 |
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| 引用本文： | 王志超,滕敏康,刘吟春. 用正电子湮没技术研究a-Si:H/a-SiNx:H多层膜中的界面缺陷[J]. 物理学报, 1991, 40(12): 1973-1979 |
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| 作者姓名： | 王志超 滕敏康 刘吟春 |
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| 作者单位： | 南京大学物理系,南京,210008 |
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| 摘 要： | 本文报道应用正电子湮没技术(PAT)对a-Si:H/a-SiNx:H(x≈0.5)多层膜系列样品所进行的研究。发现,由于a-Si:H和a-SiNx:H在结构方面的失配,导致在a-Si:H/a-SiNx:H多层膜中的界面区,产生大量缺陷。在a-Si:H子层中,紧靠界面的是应变层,厚度约为8?;在应变层之后是过渡层,厚度约为50?。在过渡层中存在大量缺陷,这就是所谓界面缺陷。关键词：
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| 关 键 词： | 正电子湮没 半导体 多层膜 缺陷 |
| 收稿时间： | 1991-01-17 |
ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT |
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| WANG ZHI-CHAO,TENG MIN-KANG and LIU YIN-CHUN. ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT[J]. Acta Physica Sinica, 1991, 40(12): 1973-1979 |
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| Authors: | WANG ZHI-CHAO TENG MIN-KANG LIU YIN-CHUN |
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| Abstract: | A series of a-Si:H/a-SiNx:H(x=0.5) multilayers are studied by positron annihilation technique (PAT). It is found that a large number of defects are induced in the interface region of a-Si:H/a-SiNx:H multilayers, owing to the structure mismatch of a-Si:H and a-SiNx:H. In the a-Si:H sublayer, there is a strained layer close to the interface, its thickness is about 8?, and a transition layer above the strained layer, its thickness is about 50?. There are a large number of defects in the transition layer, they are called the "interface defects".
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