| GaP和GaAs1-xPx中N束缚激子压力行为的理论计算 |
| |
| 引用本文： | 张勇,郑健生,吴伯僖.GaP和GaAs1-xPx中N束缚激子压力行为的理论计算[J].物理学报,1991,40(8):1329-1338. |
| |
| 作者姓名： | 张勇 郑健生 吴伯僖 |
| |
| 作者单位： | 厦门大学物理系,厦门,361005 |
| |
| 摘 要： | 本文在Koster-Slater单带位势近似下对GaP和GaAs1-xPx中N等电子中心束缚激子的压力行为与能带结构的关系进行讨论与分析,得到杂质态压力系数的一个近似的解析表达式,并对N和NNi中心能级的压力关系进行计算。同时,给出NNi中心配位的一组新的指认。
关键词：
|
| 关 键 词： | GaP GaAs1－xPx 束缚激子 压力 激子 |
| 收稿时间： | 1990-09-12 |
THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx |
| |
| ZHANG YONG,ZHENG JIAN-SHENG and WU BO-XI.THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx[J].Acta Physica Sinica,1991,40(8):1329-1338. |
| |
| Authors: | ZHANG YONG ZHENG JIAN-SHENG and WU BO-XI |
| |
| Abstract: | Using a Koster-Slater one band-one-side approximation, the relationship between the pressure behavior of nitrogen bound excitons and the band structure is investigated in GaP and GaAs1-xPx. An analytical expression is found to be a good approximation for the pressure coefficient of the deep impurity state. The pressure coefficients of N and NNi bound exciton states are calculated in GaP and GaAs0.17P0.83. A tentative new assignment which agrees with experiments in both ordering of levels and pressure coefficients is given for nitrogen pair configurations. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
