Abstract: | A laser-assisted chemical vapor deposition scheme for SnO2 films has been developed, based on the UV multiphoton dissociation of di (n-butyl) tin diacetate. Doped films were produced by simultaneous photolysis of other inorganic precursors. Films were characterized by UV–visible spectroscopy, room-temperature resistance measurements in the presence of a variety of gas-phase contaminants, and the temperature dependence of film resistance. These preliminary investigations demonstrate the ability to vary detection sensitivity and selectivity by changing the dopant precursor identity. © 1997 by John Wiley & Sons, Ltd. |