XPS study of the oxidation of nanosize Ni/Si(100) films |
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| Authors: | É. P. Domashevskaya S. V. Ryabtsev V. A. Terekhov A. S. Len’shin F. M. Chernyshov A. T. Kazakov A. V. Sidashov |
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| Affiliation: | 1.Voronezh State University,Voronezh,Russia;2.Institute of Physics,Southern Federal University,Rostovon-Don,Russia |
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| Abstract: | The XPS (X-ray photoelectron spectroscopy) study of nickel oxide nanolayers obtained by magnetron sputtering of the metal and its subsequent oxidation in air at different temperatures (400°C and 1000°C) was performed. Silicon(100) was used as a substrate. Surface of the initial Ni/Si structure was shown to contain not only Ni metal, but also the NiO oxide. Annealing at 400°C results in a complete oxidation of the metal film. At a high-temperature annealing (1000°C), nickel interacts both with oxygen and silicon substrate to form NiSi silicide and a composite Ni-Si-O phase in transition layer. Electronconductivity of NiO films is determined by intercrystallite barriers. Activation energies of film electroconductivity in model gases (O2, Ar, H2) were found. |
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