Activating MoS2 basal planes for hydrogen evolution through the As doping and strain |
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Authors: | Yi-Qi Yang Chun-Xiang Zhao Shou-Yan Bai Cai-Ping Wang Chun-Yao Niu |
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Affiliation: | International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China |
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Abstract: | As a non-precious catalyst for the electrochemical hydrogen evolution reaction (HER), the two-dimensional MoS2 has been widely studied. To activate the MoS2 inert basal plane to enable optimal activity, high defect concentration of sulfur vacancies is needed. Herein, based on the first-principles calculations we demonstrate that the HER of MoS2 can be greatly enhanced by As doping and biaxial strain. We show that the As-doping sites are new catalytic sites and the bonding of H can be greatly enhanced. Moreover, the relative hydrogen adsorption free energy () can be further manipulated by the strain effect, which efficiently adjusts the catalytic activity. With the synergy of the biaxial strain (2%–3%) and the uniform doping of the As atoms (3.125% concentration), the can be modulated to zero. Our findings provide a way to achieve the high intrinsic HER activity among molybdenum-sulfide-based catalysts. |
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Keywords: | Corresponding author. Doping Strain HER |
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