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Four-wave mixing in long wavelength III-nitride QD-SOAs |
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| Authors: | Amin H Al-Khursan A Subhi HI Abood |
| Institution: | 1. Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University, Nassiriya, Iraq;2. Physics Department, Science College, Al-Muthana University, Samawah, Iraq;3. Physics Department, Science College, Babylon University, Hillah, Iraq |
| Abstract: | Four wave mixing analysis is stated for quantum dot semiconductor optical amplifiers (QD SOAs) using the propagation equations (including nonlinear propagation contribution) coupled with the QD rate equations under the saturation assumption. Long wavelength III-nitride InN and AIInN QD SOAs are simulated. Asymmetric behavior due to linewidth enhancement factor is assigned. P-doping increases efficiency. Lossless efficiency for InAlN QDs for longer radii is obtained. Carrier heating is shown to have a considerable effect and a detuning dependence is expected at most cases. InN QD SOAs shown to have higher efficiency. |
| Keywords: | Four-wave mixing Quantum dot Semiconductor optical amplifier |
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