A novel method to measure dielectric properties of materials in terahertz spectroscopy

We present a simple method to obtain the optical and dielectric properties of samples without reference measurement in the reflection-type terahertz time-domain spectroscopy. The dielectric properties of the samples of silicon and gallium arsenide were examined. The optical and dielectric properties of the samples were measured through only simple configuration, without the misplacement error. The obtained dielectric functions of the samples in reflection geometry are in good agreement with that predicated by the theory. The main advantage of this method over other methods is its simplicity and accuracy and ease for application of the reflection systems with different incident angle.