Luminescence above the gap in heavily Zn-doped GaAs |
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Authors: | Diego Olego Manuel Cardona |
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Affiliation: | Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, Federal Republic of Germany |
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Abstract: | Several distinct features have been observed in the photoluminescence spectrum of heavily Zn-doped GaAs, in the range between 1.65eV to 2.25eV. They are attributed to direct recombination across the Eo+?o gap and to indirect processes related to Xc1 and Xc3. The Xc1 minima are thus located to be 1.935±0.01eV above the top of the valence band at 100K. Their shear deformation potential X2 is found to be . |
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