Effects of uniaxial stress on the cyclotron resonance in inversion layers on Si (100) |
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| Authors: | P Stallhofer JP Kotthaus G Abstreiter |
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| Institution: | Physik-Department, Technische Universität München, 8046 Garching, Fed. Rep. Germany;Max-Planck-Institut für Festkörperforschung, 38042 Grenoble Cedex, France |
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| Abstract: | In electron inversion layers on Si (100) MOS capacitors uniaxial stress can cause simultaneous occupation of the two non-equivalent subbands E0 and E0'. Two distinct cyclotron resonance signals are observed and can be used to determine the effective masses and the relative occupation in the two subbands and their dependence on stress and electron density. |
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