Indirect gap luminescence from tellurium-doped gallium antimonide

Photoluminescence spectra of tellurium-doped GaSb samples are reported for 1.06 μm laser Q-switched excitation. Room temperature data are reported for excitation levels up to 1 MW cm^?2. Besides the direct gap emission the data show an additional peak at an energy corresponding to the L-Γ indirect gap. It is suggested that this additional peak is associated with tellurium impurity levels located near the L conduction band minima.