Magnetic field dependence of the specific heat of heavily phosphorus doped silicon

The specific heat of phosphorus doped silicon was measured at temperatures 0.1 < T < 4.2 K in external magnetic fields 0 ≦ H_ext ≦ 38 kOe. The phosphorus concentration of the samples ranges from 5.3 × 10¹⁷ to 8.9 × 10¹⁸cm^?3. The magnetic field dependence of the specific heat was observed in the just metallic samples as well as the non-metallic ones. The metal—non-metal transition is discussed on the basis of the Anderson localized states with correlations.