Quantum efficiency and fatiguing behavior of various luminescence processes in a−As2S3 |
| |
Authors: | Jagdeep Shah MA Bösch |
| |
Institution: | Bell Laboratories, Holmdel, NJ 07733, U.S.A. |
| |
Abstract: | Measurements of the luminescence excitation spectra of amorphous As2S3 show that the quantum effieiencies of the subbandgap luminescence processes decrease whereas that of the band-to-band luminescence increases with increasing excitation photon energy. Furthermore, the band-to-band luminescence shows no fatigue, in contrast to the subbandgap processes. These results allow us to conclude that the usual defects play no role in the band-to-band luminescence process and that surface recombination is not important in the energy range investigated. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|