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Quantum efficiency and fatiguing behavior of various luminescence processes in a−As2S3
Authors:Jagdeep Shah  MA Bösch
Institution:Bell Laboratories, Holmdel, NJ 07733, U.S.A.
Abstract:Measurements of the luminescence excitation spectra of amorphous As2S3 show that the quantum effieiencies of the subbandgap luminescence processes decrease whereas that of the band-to-band luminescence increases with increasing excitation photon energy. Furthermore, the band-to-band luminescence shows no fatigue, in contrast to the subbandgap processes. These results allow us to conclude that the usual defects play no role in the band-to-band luminescence process and that surface recombination is not important in the energy range investigated.
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