Pressure dependence of the metal-semiconductor transition in TaS3

TaS₃ exhibits the metal-semiconductor transition at 218 K due to the Peierls instability. The electrical resistance was measured under pressure. It was found that both the transition temperature, Tp, and the activation energy at T=0 K, △(0), decrease with pressure at the rates of $\text{dTp}\text{dP}\text{?-1.3}\text{K}\text{kbar}$ and $\text{d△(0)}\text{dP}\text{?-4}\text{K}\text{kbar}$, respectively, while the ratio, $\text{△ (0)}\text{Tp}$, is independent of pressure.