Anisotropic polariton dispersion in red HgI2 |
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| Authors: | T Goto Y Nishina |
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| Institution: | The Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai 980, Japan |
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| Abstract: | We have measured resonant Brillouin Scattering near the A-exciton region of a layer-semiconductor, red-HgI2. The Brillouin shift is interpreted in terms of a scattering process between the two polariton states by an acoustic phonon. The estimated exciton masses for the translational motion are (0.68 ± 0.1)m0 and (1.2 ± 0.1)m0 for the (100 and (001) directions, respectively. |
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