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Magnetophotoconductivity of semi-insulating GaAs as a function of etching time
Authors:CA Eftaxias  PC Euthymiou  CD Nomicos
Institution:Physics Department, Athens University, Athens, Greece
Abstract:The magnetophotoconductivity of semi-insulating GaAs has been investigated for various etching times. We observed that the carrier lifetime of the illuminated region increases as a function of etching time approaching the bulk lifetime of the non-illuminated region. This was explained on the suggestion that the surface recombination centers gradually disappear as the etching time increases.
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