首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Modeling of Surface Diffusion in hcp Zr and Ti
Authors:MI Pascuet  JR Fernández  RC Pasianot  AM Monti
Institution:(1) Departamento de Materiales, Comisión Nacional de Energía Atómica, Avda. del Libertador 8250, 1429 Buenos Aires, Argentina
Abstract:The statics and dynamics of vacancies and adatoms on different surface orientations in two hcp materials are studied by using static relaxation techniques and many-body potentials. Formation and migration energies and entropies as well as attempt frequencies are evaluated and used in the random walk approach to obtain correlation factors and diffusivities. It is found that the main features of surface diffusion are dominated by jumps on and between a few atomic layers, so that a consistent comparison between the two mechanisms is feasible. The activation energies and the diffusivities for different environments, namely, bulk Q b, D b, symmetric grain boundaries Q gb, D gb, and surfaces, Q s, D s, calculated using the same simulation technique and interatomic potentials, fulfil the expected relationships Q s < Q gb < Q b and D s > D gb > D b. It is also found that generally adatoms are faster surface diffusers than vacancies.
Keywords:surface diffusion  point defects  atomistic simulations  HCP lattices
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号