Spectrum of surface electron states and the height of the nickel-silicon Schottky barrier in the presence of nonuniform deformation

We have studied the spectrum of surface electron states and the height (_B) of the Schottky barrier in silicon-nickel structures when a nonuniform deformation is present. We show that the decrease in the barrier height _B caused by the deformation is due both to a change in the silicon band gap and to a deformation of the spectrum of the surface electron states.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 6–9, May, 1984.