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An investigation of air-grown scandium oxide and experimental determination of the inelastic mean-free-path in scandium and in scandium oxide
Institution:1. University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade, Serbia;2. University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade, Serbia;3. Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Sofia 1113, Bulgaria;1. Pusan Center, Korea Basic Science Institute, Pusan 46742, Republic of Korea;2. Taegu Center, Korea Basic Science Institute, Taegu 41566, Republic of Korea;3. Department of Physics, Pusan National University, Pusan 46241, Republic of Korea
Abstract:The thickness of the passivation layers formed in air on scandium at room temperature was measured by XPS using the inelastic mean-free-path (IMFP) of the Sc 2p photoelectrons as well as an extrapolation of layer thickness measurements at oxygen exposures <106 L. The IMFP of scandium and scandium oxide was determined experimentally by the “overlayer” technique. The XPS standard spectra of metallic scandium and of scandium oxide were recorded. The line parameters of the Sc 2p and of the O 1s spectra were determined by a convolution program.
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