| Abstract: | The behaviour of As-related defects in SI (semi-insulating) GaAs are studied from the viewpoint of the origination of As-related precipitates, generation and evolution of EL2 during postgrowth and the possible defect interactions involved EL2 variation under As overpressure annealing. The precipitates were identified as elemental As and As-rich GaAs polycrystalline grains and their features depend on the growth process. A defect interaction model has been proposed on the generation/annihilation of EL2 assigned as AsGa VAs VGa complex respect to non-stoichiometry such as Asi VGa and VAs. |
