Photoluminescence enhancement of InP treated with activated hydrogen |
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| Institution: | 1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, China;3. University of Chinese Academy of Sciences, China;4. Hebei Shijiazhuang University, China;1. Institute of Physics and Technology, Ural Federal University, Mira Str. 19, 620002 Yekaterinburg, Russia;2. Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 18 Kovalevskoj Str., 620990 Yekaterinburg, Russia;3. College of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing 210037, PR China;4. Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, 420029 Kazan, Russia;1. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India;2. Department of Biomedical Engineering, McGill University, Montreal, H3A 0G4, Canada;3. Department of Molecular Reproduction, Development and Genetics, Indian Institute of Science, Bangalore, 560012, India;1. College of Chemistry and Chemical Engineering, and Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang 471934, China;2. Textile Engineering, Chemistry and Science Department, North Carolina State University, Raleigh, NC, USA;3. Textile Department, Functional Fibrous Structures & Environmental Enhancement (FFSEE), Amirkabir Nanotechnology Research Institute, Amirkabir University of Technology, Tehran, Iran;1. Henan University of Science and Technology, School of Physics and Engineering, No. 263, Kaiyuan Road, Luoyang 471023, China;2. Chinese Academy of Sciences, State Key Laboratory of Transient Optics and Photonics, Xi’an 710119, China;3. Henan University of Science and Technology, School of Chemical Engineering and Pharmaceutics, No. 263, Kaiyuan Road, Luoyang 471023, China;4. Nanyang Technological University, School of Physical and Mathematical Sciences, Singapore City 637371, Singapore;1. Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, China;2. College of Chemistry and Environmental Science, Lanzhou City University, Lanzhou 730070, China |
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| Abstract: | A large enhancement of the photoluminescence intensity emitted by a (100)-oriented InP surface after exposure to activated hydrogen, indicating a sharp reduction of the surface recombination rate is reported in this work. It is shown, using capacitance-voltage measurements performed on metal-insulator-semiconductor structures, that the hydrogen treatment results also in a strong pinning of the interface Fermi level. These phenomena are interpreted on the following basis: (i) neutralization by hydrogen species of active recombination centers which are deemed to be phosphorus dangling bonds; (ii) creation of pinning surface states due to the formation of volatile phosphorus hydride compounds freeing excess indium atoms. |
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