XPS study of low temperature diffusion in Au/Ni couples in the presence of arsenic |
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| Institution: | 1. Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University, China;2. Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL, Switzerland;1. School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China;2. International Institute of Green Materials, Josai International University, Togane, 283-8555, Japan;3. Department of Physics, King Abdulaziz University, Jeddah, 22254, Saudi Arabia;4. MISiS, National University of Science and Technology, 119049, Moscow, Russia;5. School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;6. Department of Chemistry, King Abdulaziz University, Jeddah, 22254, Saudi Arabia;1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;2. Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China |
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| Abstract: | X-ray photoelectron spectroscopy, XPS, has been utilized to determine the low temperature grain boundary diffusion of nickel through gold thin films by means of surface accumulation. Surface accumulation is aided by a rapid oxidation of the nickel diffusant at the surface by arsenic vapor at very low (<10-8 Torr) pressure causing a rapid accumulation of nickel arsenide product. The initial low temperature diffusion parameters of Au/Ni couples were measured in situ without interrupting the reaction-accumulation process. Accumulation and diffusion rates were obtained for temperatures ranging from 110 to 147° C. A discontinuity in an otherwise linear accumulation was observed after approximately 150 min. Evidence suggests that surface effects become rate limiting at this point. |
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