Abstract: | Electronegativity difference approach (ENDA) has been successfully employed to obtain good prediction of the In atomic fraction, energy bandgap and lattice constant of the Ga1 – xInxSb/Ga1 – yInySb/GaSb system. Nearly lattice-matched GalnSb epilayers with In atomic fraction of 0.42 have been obtained by the liquid phase epitaxy. The cut-off wavelength was 2.2 μm at room temperature. |