MnxGe1－x稀磁半导体薄膜的结构研究

利用X 射线衍射(XRD)和X射线吸收精细结构(XAFS)方法研究了磁控共溅射方法制备的Mn_xGe_1-x薄膜样品的结构随掺杂磁性原子Mn含量的变化规律.XRD结果表明，在Mn的含量较低(7.0%)的Mn_0.07Ge_0.93样品中，只能观察到对应于多晶Ge的XRD衍射峰，而对Mn含量较高(25.0%, 36.0%)的Mn_0.25Ge_0.75和Mn关键词： 磁控溅射 XRD XAFS xGe_1-x稀磁半导体薄膜')" href="#">Mn_xGe_1-x稀磁半导体薄膜

Structure of MnxGe1-x dilute magnetic semiconductor films

The structure of Mn_xGe_1-x dilute magnetic semiconductor thin films prepared by magnetron co-sputtering has been studied by X-ray diffraction (XRD) and X-ray absorption fine structure (XAFS) techniques. The XRD results show that in the Mn_xGe_1-x thin film with low Mn doping concentration (x=0.070), only diffraction peaks attributed to crystalline Ge can be observed. In samples with high Mn doping concentrations (x=0.250, 0.360), the secondary phase Ge₃Mn₅ appears, and its content enhances with Mn doping concentration. The XAFS results indicate that for the Mn_0.07Ge_0.93 thin film, Mn atoms are mainly incorporated into the Ge lattice and located at the substitutional sites of Ge atoms with the ratio of 75%, while for the Mn_0.25Ge_0.75 and Mn_0.36Ge_0.64 samples, most of the Mn atoms are aggregated to form Ge₃Mn₅.