The electronic properties of SiCAlN quaternary compounds |
| |
Authors: | Z Q Liu J Ni |
| |
Institution: | (1) Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience (Ministry of Education), Tsinghua University, Beijing, 100084, P.R. China |
| |
Abstract: | We have investigated the properties of SiCAlN quaternary
compounds composed of SiC and AlN polytypes by first-principle
calculations. We find that their band gaps have a large tunability
and are sensitive to the polytype structures. Their electronic
properties vary from wide-band-gap semiconducting to metallic due to
the complex charge transfer between the two constituents SiC and
AlN. The formation energies are also calculated. These results show
SiCAlN quaternary compounds have potential applications in the
electronic devices that can be tuned over a large wavelength range. |
| |
Keywords: | 74 70 Dd Ternary quaternary and multinary compounds 71 20 Nr Semiconductor compounds 71 20 -b Electron density of states and band structure of crystalline solids |
本文献已被 SpringerLink 等数据库收录! |