Some properties of a-C:N films prepared by KrF laser ablation

Thin a-C:N films were prepared by pulsed laser ablation using a KrF excimer laser and a graphite target. The influence of the substrate temperatureT_s (27°C and 330°C), and the nitrogen gas ambient pressurepn (1.5 Pa, 13.3 Pa and 40 Pa) on the film properties was studied. The films were characterized by scanning electron microscopy, Rutherford backscattering, spectroscopic ellipsometry and by Raman scattering. The nitrogen content in the films was in the range from 20 to 31 at.%, and those of oxygen from 5.6 to 10.7 at.%. For lowerpn andT_s the film delamination was observed.The authors wish to thank J. Sobota from the Institute of Scientific Instruments of ASCR, Brno, for valuable discussions.This work was supported by Grant Agency of the Academy of Sciences of the Czech Republic under Grant No. 202/93/0464.